1/5 semiconductor technical data kmb7d0dn40qa dual n-ch trench mosfet revision no : 2 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for power management in pc, portable equipment and battery powered systems. features v dss =40v, i d =7a. drain to source on resistance. r ds(on) =25m (max.) @v gs =10v r ds(on) =45m (max.) @v gs =4.5v maximum ratings (ta=25 unless otherwise noted) b2 g h b1 1 4 5 8 a p d l t flp-8 0.20+0.1/-0.05 t p 1.27 millimeters dim a 4.85 0.2 + _ b1 3.94 0.2 + _ b2 6.02 0.3 + _ d 0.4 0.1 + _ g 0.15+0.1/-0.05 h 1.63 0.2 + _ l 0.65 0.2 + _ pin connection (top view) 1 2 3 4 8 7 6 5 s 1 g 1 s 2 g 2 d 1 d 1 d 2 d 2 1 2 3 4 8 7 6 5 2009. 9. 24 characteristic symbol pating unit drain to source voltage v dss 40 v gate to source voltage v gss 20 v drain current t a =25 i d 7 a pulsed i dp 36 a drain to source diode forward current i s 1.7 a drain power dissipation t a =25 p d 2 w t a =100 1.44 w maximum junction temperature t j -55~150 storage temperature range t stg -55~150 thermal resistance, junction to ambient r thja 62.5 /w kmb7d 0dn 40qa note1) surface mounted on 1 1 fr4 board., t ?a 10sec
2009. 9. 24 2/5 kmb7d0dn40qa revision no : 2 electrical characteristics (ta=25 ) unless otherwise noted characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss i d =250 a, v gs =0v 40 - - v drain cut-off current i dss v ds =32v, v gs =0v - - 1 a gate to source leakage current i gss v gs = 20v, v ds =0v - - 100 a gate to source threshold voltage v th v ds =v gs, i d =250 a 1 1.8 2.5 v drain to source on resistance r ds(on) v gs =10v, i d =6a - 20 25 m v gs =4.5v, i d =5a - 35 45 on-state drain current i d(on) v ds =5v, v gs =10v 15 - - a forward transconductance g fs v ds =5v, - 8 - s dynamic input capaclitance c iss v ds =20v, f=1mhz, v gs =0v - 954 - pf ouput capacitance c oss - 201 - reverse transfer capacitance c rss - 82 - total gate charge q g v ds =20v, v gs =4.5v, i d =6a - 11.6 - nc gate to source charge q gs - 2.8 - gate to drain charge q gd - 2.2 - turn-on delay time t d(on) v dd =20v, v gs =10v i d =1a, r g =3.3 - 16.7 - ns turn-on rise time t r - 3.6 - turn-off delay time t d(off) - 28.7 - turn-off fall time t f - 10.1 - source to drain diode ratings source to drain forward voltage v sd i s =1.7a, v gs =0v - 0.78 1.2 v note2) pulse test : pulse width 10 , duty cycle 1%
2009. 9. 24 3/5 kmb7d0dn40qa revision no : 2 0 0 2 4 8 12 16 20 46810 3.5v v gs =3.0v v gs =10v 4.0v drain current i d (a) 0 0 8 4 10 20 30 40 50 12 16 20 gate to source volatage v gs (v) 0 1 4 8 12 16 20 2345 25 c normalized drain source on resistance r ds(on) 0.2 0.8 0.6 2.0 1.8 1.6 1.4 0.4 1.2 1.0 50 25 175 150 125 0 -50 100 75 -75 junction temperature tj ( ) c -75 -25 0 -50 75 100 125 175 150 25 50 0.2 0.4 0.6 1.4 0.8 1.0 1.6 1.2 junction temperature tj ( ) c v ds =v gs, i d =250 a normalized gate to source threshold voltage v th drain current i d (a) drain to source voltage v ds (v) drain current i d (a) drain to source on resistance r ds(on) (m ? ) v gs =10v v gs =4.5v 150 c t j =-55 c fig1. i d - v ds fig2. r ds(on) - i d fig3. i d - v gs fig4. r ds(on) - t j fig5. v th - t j i d =5a v gs =4.5v, i d =6a v gs =10v, 10 -2 10 -1 10 0 10 1 10 2 fig6. i s - v sd 0.2 0.4 1.2 0.6 0.8 1.0 reverse drain current i s (a) source to drain voltage v sd (v) tj=25 c tj=-55 c tj=150 c
2009. 9. 24 4/5 kmb7d0dn40qa revision no : 2 drain to current i d (a) drain to source voltage v ds (v) fig9. safe operation area 10 0 10 -2 10 -2 10 -1 10 0 10 1 10 2 10 -1 10 2 10 1 v gs = 10v single pulse t j = 25 c dc 10ms 1ms 100 s r ds(on) li mit 100ms gate charge q g (nc) 0 10 6 2 4 8 12 6 915 3 0 fig 8. v gs - q g gate to source voltage v gs (v) v ds = 20v, i d = 6a f=1mhz ciss coss crss fig 7. c - v ds drain to source voltage v ds (v) 20 10 30 40 0 capacitance (pf) 0 900 1200 1500 300 600 10 -4 10 -3 10 -2 10 -1 1 10 1 10 -3 10 -2 10 -1 10 2 10 1 10 3 1 square wave pulse duration tw ( sec ) fig10. transient thermal response curve normalized effective transient ther mal resistance 0.1 0.01 0.02 0.05 0.5 0.2 single t 1 t 2 p dm r ja = 71.9 c/w
2009. 9. 24 5/5 kmb7d0dn40qa revision no : 2 fig.7 gate charge circuit and wave form v gs 10 v q g q gd q gs q v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off i d i d fig.8 resistive load switching v ds v gs v ds v gs 1.0 ma schottky diode 10 v 6 ? r l 0.5 v dss 0.5 v dss
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